|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
VCES Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability IXSH 30 N60U1 IXSH 30 N60AU1 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 33 W Clamped inductive load, L = 100 mH VGE = 15 V, VCE = 360 V, TJ = 125C RG = 33 W, non repetitive TC = 25C Maximum Ratings 600 600 20 30 50 30 100 ICM = 60 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A A TO-247 AD G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Features ms W C C C * International standard package JEDEC TO-247 AD * High frequency IGBT with guaranteed Short Circuit SOA capability * IGBT and anti-parallel FRED in one package * 2nd generation HDMOSTM process * Low VCE(sat) - for low on-state conduction losses * MOS Gate turn-on - drive simplicity Applications Mounting torque 1.13/10 Nm/lb.in. 6 300 g C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 5 TJ = 25C TJ = 125C 8 500 8 100 30N60U1 30N60AU1 2.5 3.0 V V mA mA nA V V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 750 mA, VGE = 0 V = 2.5 mA, VCE = VGE * * * * * AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Advantages * Space savings (two devices in one package) * Easy to mount with 1 screw (isolated mounting screw hole) * Reduces assembly time and cost * High power density IXYS reserves the right to change limits, test conditions, and dimensions. 92714F (12/96) (c) 2000 IXYS All rights reserved 1-6 IXSH 30N60U1 IXSH 30N60AU1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 7 13 100 2760 VCE = 25 V, VGE = 0 V, f = 1 MHz 240 51 110 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 34 47 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 30N60U1 30N60AU1 30N60U1 30N60AU1 30N60U1 30N60AU1 60 130 400 30N60U1 30N60AU1 30N60AU1 400 200 2.5 60 130 4.2 540 340 600 340 12 6 1000 525 1500 700 150 45 63 S A pF pF pF nC nC nC ns ns ns ns ns mJ ns ns mJ ns ns ns ns mJ mJ 0.63 K/W 0.25 K/W Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD (IXSH) Outline gfs IC(on) C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % VGE = 15 V, VCE = 10 V 1.5 2.49 Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.6 10 150 35 15 50 V A ns ns IF = IC90, VGE = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF/dt = 240 A/ms VR = 360 V TJ = 125C IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25C 1 K/W (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-6 IXSH 30N60U1 IXSH 30N60AU1 Fig.1 Saturation Characteristics 60 TJ = 25C Fig.2 Output Characterstics 100 TJ = 25C VGE = 15V VGE = 15V 50 13V 80 IC - Amperes IC - Amperes 40 30 20 10 0 9V 7V 11V 60 13V 40 20 0 11V 9V 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 18 20 VCE - Volts VCE - Volts Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 9 8 7 TJ = 25C Fig.4 Temperature Dependence of Output Saturation Voltage 1.8 1.6 VGE = 15V IC = 60A VCE(sat) - Normalized VCE - Volts 1.4 1.2 IC = 30A 6 5 4 3 2 1 0 8 9 10 11 12 13 IC = 15A IC = 30A IC = 60A 1.0 0.8 0.6 -50 IC = 15A 14 15 -25 0 25 50 75 100 125 150 VGE - Volts TJ - Degrees C Fig.5 Input Admittance 60 VCE = 10V Fig.6 Temperature Dependence of Breakdown and Threshold Voltage 1.3 BV / VGE(th) - Normalized 50 1.2 1.1 1.0 0.9 0.8 0.7 -50 VGE(th) BVCES IC = 3mA IC - Amperes 40 30 TJ = 25C 20 TJ = 125C 10 0 TJ = - 40C IC = 2.5mA 5 6 7 8 9 10 11 12 13 14 15 -25 0 25 50 75 100 125 150 VGE - Volts TJ - Degrees C (c) 2000 IXYS All rights reserved 3-6 IXSH 30N60U1 IXSH 30N60AU1 Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current 1000 TJ = 125C RG = 10W Eoff (-A) hi-speed Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 10.0 1000 TJ = 125C IC = 30A 10.0 tfi - nanoseconds tfi - nanoseconds Eoff - milliJoules 500 tfi (-A) hi-speed 5.0 500 tfi (-A), hi-speed Eoff (-A), hi-speed 5.0 250 2.5 250 2.5 0 0 10 20 30 40 50 0.0 60 0 0 10 20 30 40 0.0 50 IC - Amperes RG - Ohms Fig.9 Gate Charge Characteristic Curve 15 12 9 6 3 0 0 25 50 75 100 125 150 IC = 30A VCE = 300V Fig.10 Turn-Off Safe Operating Area 100 TJ = 125C 10 RG = 4.7W dV/dt < 6V/ns IC - Amperes VGE - Volts 1 0.1 0.01 0 100 200 300 400 500 600 Qg - nanocoulombs VCE - Volts Fig.11 Transient Thermal Impedance 1 D=0.5 ZthJC (K/W) 0.1 D=0.2 D=0.1 D=0.05 D=0.02 D = Duty Cycle 0.01 D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2000 IXYS All rights reserved Eoff - millijoules 750 7.5 750 7.5 4-6 IXSH 30N60U1 IXSH 30N60AU1 Fig.12 Maximum Forward Voltage Drop 100 80 25 Fig.13 Peak Forward Voltage VFR and Forward Recovery Time tfr TJ = 125C 1000 800 VFR Current - Amperes 60 40 20 0 0.5 TJ = 100C 15 10 5 tfr 600 400 200 0 600 TJ = 25C 0 1.0 1.5 2.0 2.5 0 100 200 300 400 500 Voltage Drop - Volts diF /dt - A/s Fig.14 Junction Temperature Dependence off IRM and Qr 1.4 1.2 1.0 0.8 IRM Fig.15 Reverse Recovery Chargee 4 TJ = 100C VR = 350V IF = 30A max. Qr - nanocoulombs Normalized IRM /Qr 3 2 typ. IF = 60A 0.6 0.4 0.2 0.0 0 Qr 1 IF = 30A IF = 15A 0 40 80 120 160 1 10 100 1000 TJ - Degrees C diF /dt - A/s Fig.16 Peak Reverse Recovery Current 40 TJ = 100C VR = 350V IF = 30A max. Fig.17 Reverse Recovery Time 0.8 IF = 30A max. TJ = 100C VR = 350V trr - nanoseconds 30 0.6 typ. IF = 60A IRM - Amperes typ. IF = 60A 20 IF = 30A IF = 15A 0.4 IF = 30A IF = 15A 10 0.2 0 200 400 600 0.0 0 200 400 600 diF /dt - A/s diF /dt - A/s (c) 2000 IXYS All rights reserved 5-6 tfr - nanoseconds TJ = 150C 20 IF = 37A VFR - Volts IXSH 30N60U1 IXSH 30N60AU1 Fig.18 Diode Transient Thermal resistance junction to case 1.00 RthJC - K/W 0.10 0.01 0.001 0.01 0.1 1 Pulse Width - Seconds (c) 2000 IXYS All rights reserved 6-6 |
Price & Availability of IXSH30N60U1 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |